Thin film transistor substrate and method for manufacturing same
US8421078B2 · kind B2 · utility
6Cited by
2References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2009 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Dec 19, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/134372
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor (TFT) substrate includes gate lines, data lines intersecting with the gate lines, a plurality of TFTs, pixel electrodes, and a common electrode insulating the gate lines, the data lines, the TFTs, and the pixel electrode. Each pixel electrode is connected to one of the gate lines and one of the data lines via one of the TFTs. A layer stack including an insulating layer and a passivation layer is sandwiched between the pixel electrodes and the common electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.