Antimonide-based compound semiconductor with titanium tungsten stack

US8421121B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Yeong-Chang Chou · Irvine, US
• Jay D. Crawford · Long Beach, US
• Jane Lee · Torrance, US
• Jeffrey Ming-Jer Yang · Cerritos, US
• John Bradley Boos · Springfield, US
• Nicolas A. Papanicolaou · Silver Spring, US

Key dates

• Filing date: Apr 18, 2007
• Grant date: Apr 16, 2013
• Expiry date: Jan 22, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/4732

Abstract

An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.