Connecting material having metallic particles of an oxygen state ratio and size and semiconductor device having the connecting material
US8421247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2009 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jun 8, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2982
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A connecting material that includes metallic particles with an oxygen state ratio of less than 15% as measured by X-ray photoelectron spectroscopy and a mean particle size between 0.1 μm and 50 μm; and especially a connecting material that includes metallic particles that have been subjected to treatment for removal of a surface oxide film and subjected to surface treatment with a surface protective material, so as to provide a connecting material having a high coefficient of thermal conductivity even when joined at a curing temperature of up to 200° C. without application of a load, and that has sufficient bonding strength even when the cured product has been heated at 260° C.; as well as a semiconductor device employing the connecting material to bond a semiconductor element to a support member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.