Field assisted switching of a magnetic memory element
US8422277B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jul 1, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Method and apparatus for writing data to a magnetic memory element, such as a spin-torque transfer random access memory (STRAM) memory cell. In accordance with various embodiments, a write current is applied through a magnetic memory element to initiate magnetic precession of the element to a desired magnetic state. A flow of a field assist current is subsequently initiated adjacent the magnetic memory element during continued application of the write current to induce a magnetic field upon the element. The field assist current persists after the write current is terminated to provide field assisted precession to the desired magnetic state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.