Semiconductor integrated circuits including optoelectronic device for changing optical phase
US8422834B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2008 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Apr 18, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/302
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 μm to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.