Semiconductor device
US8422837B2 · kind B2 · utility
3Cited by
0References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2009 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Oct 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.