Method of forming photomask by collecting verification data based on a layout of contour patterns
US8423920B2 · kind B2 · utility
3Cited by
3References
20Claims
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Key dates
| Filing date | Jun 24, 2011 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jun 29, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a photomask includes providing a layout of design patterns, setting an optical proximity correction (OPC) with respect to the layout of design patterns, and forming a layout of correction patterns with respect to the layout of design patterns by using the set OPC. The method also includes collecting verification data about the layout of correction patterns by using a layout of contour patterns based on the layout of correction patterns, and verifying whether the layout of design patterns and the layout of correction patterns are substantially identical to each other by using the verification data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.