Simulation of the image projected by a mask
US8423927B2 · kind B2 · utility
3Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jun 8, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosure concerns a method of simulating the image projected by a mask during photolithography including determining by a processor (702), taking into account the thickness of a masking layer of a mask, a near-field transmission amplitude curve of light passing through the mask across at least one pattern boundary in the initial mask layout; calculating by the processor, for each of a plurality of zones, average values of the curve; and simulating by a simulator (708) the image projected by the initial mask layout during the photolithography based on the average values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.