Wet metal-etching method and apparatus for MEMS device fabrication

US8425718B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Yadong Jiang · Sichuan, CN
• Zhiming Wu · Nanhu, CN
• Tao Wang · Beijing, CN
• Weizhi Li · San Jose, US
• Xiaolin Han · Bositenghu, CN

Key dates

• Filing date: Mar 15, 2010
• Grant date: Apr 23, 2013
• Expiry date: Apr 30, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/32134
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides a method of wet etching a silicon slice including a silicon substrate and a metal film layer thereon comprising steps of: performing lithographic process to the silicon slice forming a masked silicon slice comprising the silicon substrate and a partially masked metal film thereon; immersing the masked silicon slice into an etchant; rotating the masked silicon slice in the etchant; injecting high-purity nitrogen gas into the etchant for agitating the etchant; removing the masked silicon slice out of the etchant, upon completion of etching; and rinsing the masked silicon slice with deionized water.