Compound semiconductor device and method of manufacturing the same

US8426260B2 · kind B2 · utility

Assignee

• FUJITSU LIMITED · JP

Inventors

• Toyoo Miyajima · Kawasaki, JP
• Toshihide Kikkawa · Kawasaki, JP
• Kenji Imanishi · Tokyo, JP
• Toshihiro Ohki · Hadano, JP
• Masahito Kanamura · Kawasaki, JP

Key dates

• Filing date: Nov 11, 2011
• Grant date: Apr 23, 2013
• Expiry date: Nov 11, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A compound semiconductor device includes: an electron transport layer formed over a substrate; an electron supply layer formed over the electron transport layer; and a cap layer formed over the electron supply layer; the cap layer includes a first compound semiconductor layer containing GaN; a second compound semiconductor layer containing AlN, which is formed over the first compound semiconductor layer; a third compound semiconductor layer containing GaN, which is formed over the second compound semiconductor layer; and at least one of a first AlGaN-containing layer and a second AlGaN-containing layer, with the first AlGaN-containing layer formed between the first compound semiconductor layer and the second compound semiconductor layer and the Al content increases toward the second compound semiconductor layer, and the second AlGaN-containing layer formed between the second compound semiconductor layer and the third compound semiconductor layer and the Al content increases toward the second compound semiconductor layer.