Manufacturing method of microcrystalline silicon film and manufacturing method of semiconductor device
US8426295B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 6, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Oct 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a manufacturing method of a microcrystalline silicon film having both high crystallinity and high film density. In the manufacturing method of a microcrystalline silicon film according to the present invention, a first microcrystalline silicon film that includes mixed phase grains is formed over an insulating film under a first condition, and a second microcrystalline silicon film is formed thereover under a second condition. The first condition and the second condition are a condition in which a deposition gas containing silicon and a gas containing hydrogen are used as a first source gas and a second source gas. The first source gas is supplied under the first condition in such a manner that supply of a first gas and supply of a second gas are alternately performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.