Method of manufacturing semiconductor device
US8426302B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2012 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Feb 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device according to an embodiment, includes: forming a stack structure by alternately stacking control gate electrodes and interlayer insulating films; forming a through-hole that penetrates through the stack structure in a stacking direction of the control gate electrodes and the interlayer insulating films; forming a first insulating film that covers an inner surface of the through-hole; forming a charge storage layer that covers an inner surface of the first insulating film; forming a second insulating film that covers an inner surface of the charge storage layer; forming a semiconductor layer that covers an inner surface of the second insulating film; and oxidizing an interface between the semiconductor layer and the second insulating film by performing a heat treatment in an atmosphere containing O2 gas at a temperature of 600° C. or lower.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.