Manufacturing method of semiconductor device, and mounting structure thereof
US8426303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Jul 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15788
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with improved quality and reliability is provided. In a UBM formed over an electrode pad located over a semiconductor substrate, the edge (end) of an Au film as an upper layer is located inside or in the same position as the edge (end) of a TiW film as a lower layer, which can suppress the formation of a suspended part in the Au film. This arrangement can prevent the occurrence of electrical short circuit between the adjacent pads due to the suspended part and the adhesion of the suspended part as foreign matter to the semiconductor substrate, thus improving the quality and reliability of the semiconductor device (semiconductor chip).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.