Graphene nanoelectric device fabrication
US8426309B2 · kind B2 · utility
9Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2010 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Jul 23, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2204/22
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide methods for fabricating graphene nanoelectronic devices with semiconductor compatible processes, which allow wafer scale fabrication of graphene nanoelectronic devices. Embodiments of the present invention also provide methods for passivating graphene nanoelectronic devices, which enable stacking of multiple graphene devices and the creation of high density graphene based circuits. Other embodiments provide methods for producing devices with graphene layer segments having multiple thicknesses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.