Semiconductor grain and oxide layer for photovoltaic cells
US8426722B2 · kind B2 · utility
17Cited by
14References
5Claims
0Family size
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Key dates
| Filing date | Oct 24, 2007 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Dec 19, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.