Light emitting device, light emitting device package, and display device therewith
US8426844B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Nov 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.