Transistors and electronic apparatuses including same
US8426852B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 1, 2010 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Dec 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Transistors and electronic apparatuses including the same are provided, the transistors include a channel layer on a substrate. The channel layer includes a zinc (Zn)-containing oxide. The transistors include a source and a drain, respectively, contacting opposing ends of the channel layer, a gate corresponding to the channel layer, and a gate insulating layer insulating the channel layer from the gate. The channel layer has a first surface adjacent to the substrate, a second surface facing the first surface, and a channel layer-protection portion on the second surface. The channel layer-protection portion includes a fluoride material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.