Semiconductor light emitting device and method of manufacturing the same
US8426880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2008 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Feb 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.