Nonvolatile semiconductor memory device and method of manufacturing the same

US8426908B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventor

• Kazuyuki Higashi · Farmington Hills, US

Key dates

• Filing date: Sep 3, 2010
• Grant date: Apr 23, 2013
• Expiry date: Jul 22, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6728

Abstract

A nonvolatile semiconductor memory device includes a first region having a plurality of electrically rewritable memory cells disposed therein, and a second region adjacent to the first region. The nonvolatile semiconductor memory device includes a plurality of first conductive layers, a semiconductor layer, a charge storage layer, and an insulating columnar layer. The plurality of first conductive layers are stacked in the first region and the second region, and include a stepped portion in the second region, positions of ends of the plurality of first conductive layers being different in the stepped portion. The semiconductor layer is surrounded by the first conductive layers in the first region, includes a first columnar portion extending in a stacking direction. The charge storage layer is formed between the first conductive layers and a side surface of the first columnar portion. The insulating columnar layer is surrounded by the first conductive layers in the stepped portion, and includes a second columnar portion extending in the stacking direction and comprising an insulator.