Semiconductor device integrated with converter and package structure thereof
US8426914B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 26, 2011 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | May 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a semiconductor device including a semiconductor substrate having a first conductive type, at least one high-side transistor device and at least one low-side transistor device. The high-side transistor device includes a doped high-side base region having a second conductive type, a doped high-side source region having the first conductive type and a doped drain region having the first conductive type. The doped high-side base region is disposed within the semiconductor substrate, and the doped high-side source region and the doped drain region are disposed within the doped high-side base region. The doped high-side source region is electrically connected to the semiconductor substrate, and the semiconductor substrate is regarded as a drain of the low-side transistor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.