Vertical Hall sensor and method of producing a vertical Hall sensor
US8426936B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 2010 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Nov 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N52/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Through a main surface (10) of a semiconductor substrate (1) of a first type of conductivity, a doped well of a second type of conductivity is implanted to form a sensor region (3) extending perpendicularly to the main surface. The sensor region can be confined laterally by trenches (5) comprising an electrically insulating trench filling (6). The bottom of the sensor region is insulated by a pn-junction (20). Contacts (4) are applied to the main surface and provided for the application of an operation voltage and the measurement of a Hall voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.