Surface acoustic wave device
US8427032B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2012 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Jan 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/02669
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A surface acoustic wave device prevents a decrease in yield and a decrease in reliability, such as an impulse withstand voltage, and achieves good frequency characteristics, even when using higher frequencies. The surface acoustic wave device includes an IDT electrode disposed on a piezoelectric substrate, and a first insulating film and at least one second insulating film disposed on the IDT electrode, and utilizes a higher-order mode of an SH wave, in which the acoustic velocity of a surface acoustic wave in the first insulating film located closer to the IDT electrode than the insulating film at an outermost surface is higher than the acoustic velocity of a surface acoustic wave in the second insulating film located at the outermost surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.