Patent · US Active

Device for controlling a power transistor

US8427226B2 · kind B2 · utility

2Cited by
2References
11Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 18, 2010
Grant dateApr 23, 2013
Priority date
Expiry dateFeb 23, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K17/08122
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

The invention relates to a gate control device for a JFET-type transistor that has a gate, a drain and a source. The gate control device includes a voltage generation circuit comprising an output connected to the gate of the transistor, where the circuit is designed to generate at the output a reference gate-source voltage following a predetermined voltage ramp. A voltage limiting circuit is designed to limit the reference gate-source voltage to a predetermined maximum value when the gate-source voltage at the terminals of the JFET transistor has reached said maximum value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.