Low-noise amplifier with gain enhancement
US8427240B2 · kind B2 · utility
72Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2010 |
| Grant date | Apr 23, 2013 |
| Priority date | — |
| Expiry date | Jun 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/492
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A low-noise amplifier (“LNA”) includes a first cascode gain stage including a first complementary metal oxide semiconductor (“CMOS”) transistor configured to receive a radio frequency (“RF”) input signal and a second CMOS transistor coupled to an output node. The first inductive gate network is coupled to a gate of the second CMOS transistor for increasing a gain of the first cascode gain stage. The first inductive gate network has a non-zero inductive input impedance and includes at least one passive circuit element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.