Method of manufacturing graphene, graphene manufactured by the method, conductive film comprising the graphene, transparent electrode comprising the graphene, and radiating or heating device comprising the graphene
US8431103B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 21, 2010 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Sep 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02645
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a method of manufacturing graphene, graphene manufactured by the method, a conductive thin film including the graphene, a transparent electrode comprising the graphene, and a radiating or heating device comprising the graphene. The method includes: preparing a graphene member including a base member, a hydrophilic oxide layer formed on the base member, a hydrophobic metal catalyst layer formed on the oxide layer, and graphene grown on the metal catalyst layer; applying water to the graphene member; separating the metal catalyst layer from the oxide layer; and removing the metal catalyst layer using an etching process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.