Semiconductor structures

US8431929B2 · kind B2 · utility

Assignee

• Au Optronics Corporation · TW

Inventors

• Kuo-Lung Fang · Hsinchu, TW
• Chih-Chun Yang · Hsinchu, TW
• Han-Tu Lin · Zhuolan Township, TW

Key dates

• Filing date: Dec 9, 2009
• Grant date: Apr 30, 2013
• Expiry date: Oct 9, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate, a gate disposed thereon, an insulation layer disposed on the substrate and overlying the gate, a patterned semiconductor layer disposed on the insulation layer, a source and a drain disposed on the patterned semiconductor layer, a protective layer overlying the insulation layer, the source and the boundary of the drain to expose a portion of the drain, and a pixel electrode disposed on the substrate, overlying the protective layer overlying the boundary of the drain, electrically connected to the exposed drain.