Semiconductor light-emitting device
US8431939B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 2010 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Aug 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
Abstract
The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.