Method and system for photolithographic fabrication with resolution far below the diffraction limit
US8432533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2010 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Mar 17, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70375
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and system for photolithography is provided. The system includes a photoresist comprising a photoinitiator and a prepolymer resin. The system further includes a first light source operable to generate at least a first beam of light which is focused on a first area of the photoresist. The first beam of light is configured to excite the photoinitiator. The system further includes a second light source operable to generate at least a second beam of light which is focused on a second area of the photoresist, the second beam of light configured to deactivate at least temporarily the photoinitiator excited by the first beam of light. The first area and second area overlap at least partially. A time difference of at least 10 ns exists between the photoinitiator being excited by the first beam of light and the photoinitiator initiating polymerization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.