Photo-pumped semiconductor optical amplifier
US8432609B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2010 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Sep 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34306
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.