Patent · US Active

Magnetic recording element

US8432728B2 · kind B2 · utility

0Cited by
1References
8Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 19, 2011
Grant dateApr 30, 2013
Priority date
Expiry dateSep 19, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C19/0808
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A magnetic recording element is disclosed for which current density required for writing is low and structure of the element is simple. It comprises a ferromagnetic fine wire formed on a Si substrate, current electrodes that contact ends of the ferromagnetic fine wire, and voltage electrodes joined to the ferromagnetic fine wire and current electrodes to measure voltage across part of the ferromagnetic fine wire in cooperation with the current electrodes. A magnetic domain wall is induced in the ferromagnetic fine wire when the element is manufactured. A depression is formed in the surface on top of the ferromagnetic fine wire between the voltage electrodes, and between one of the current electrodes and one of the voltage electrodes. Voltage is measured between the two voltage electrodes when reading current is applied, to determine whether the magnetic domain wall is present between the two voltage electrodes, whereby recorded data can be identified.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.