Semiconductor storage device with a well control circuit
US8432744B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2011 |
| Grant date | Apr 30, 2013 |
| Priority date | — |
| Expiry date | Oct 13, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage device according to an embodiment includes multiple memory cells which electrically rewrite data, a well control circuit which outputs an erasure voltage to be applied to a well through an output terminal, a first pump circuit which outputs a voltage set by boosting an input voltage to the output terminal, a second pump circuit which outputs a voltage set by boosting the input voltage to the output terminal and outputs a voltage higher than an output voltage of the first pump circuit, a pump switching detecting circuit which outputs an assist signal to perform a boosting operation on at least one of the first pump circuit and the second pump circuit and an erase pulse control circuit which sets target voltages of the first pump circuit and the second pump circuit, on the basis of setting values to set a target voltage of the erasure voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.