Methods for forming a ruthenium-based film on a substrate
US8435428B2 · kind B2 · utility
1Cited by
23References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 20, 2011 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Jan 20, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4481
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.