Magnetic stack structure and manufacturing method thereof
US8435652B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Jul 9, 2009 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Sep 7, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetic stack structure is disclosed. The magnetic stack structure includes two metal layers and a free layer sandwiched by the two metal layers. The thickness of the free layer is 1-30 nm. The thickness of the metal layers are 0.1-20 nm respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.