Sensor and method for fabricating the same
US8435821B2 · kind B2 · utility
1Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2010 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Aug 27, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor and method for fabricating a sensor is disclosed that in one embodiment bonds an etched semiconductor substrate wafer to an etched device wafer comprising a silicon on insulator wafer to create a suspended structure, the flexure of which is determined by an embedded sensing element to measure absolute pressure. Interconnect channels embedded in the sensor facilitate streamlined packaging of the device while accommodating interconnectivity with other devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.