Reverse-conducting semiconductor device and method for manufacturing such a reverse-conducting semiconductor device

US8435863B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Wolfgang Janisch · Stuttgart, DE
• Eustachio Faggiano · Wohlen, CH

Key dates

• Filing date: Jun 21, 2010
• Grant date: May 7, 2013
• Expiry date: Aug 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/231

Abstract

A reverse-conducting semiconductor device (RC-IGBT) including a freewheeling diode and an insulated gate bipolar transistor (IGBT), and a method for making the RC-IGBT are provided. A first layer of a first conductivity type is created on a collector side before a second layer of a second conductivity type is created on the collector side. An electrical contact in direct electrical contact with the first and second layers is created on the collector side. A shadow mask is applied on the collector side, and a third layer of the first conductivity type is created through the shadow mask. At least one electrically conductive island, which is part of a second electrical contact in the finalized RC-IGBT, is created through the shadow mask. The island is used as a mask for creating the second layer, and those parts of the third layer which are covered by the island form the second layer.