Method of manufacturing semiconductor device and method of manufacturing electronic device
US8435867B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2010 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Dec 12, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19041
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Foreign matter formed over (or adhered to) a surface of a lead is reliably removed. A laser beam is applied to a residual resin (sealing body) which is formed in (or adhered to) a region surrounded by a sealing body (a first sealing body), a lead exposed (projected) from the sealing body, and a dam bar. The foreign matter formed over (or adhered to) the surface of the lead can be reliably removed by washing the surface of the lead after the removal of the residual resin. Thus, in a subsequent plating step, the reliability (wettability, adhesion with the lead) of a plating film to be formed over the surface of the lead can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.