Semiconductor substrate surface treatment method
US8435903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2011 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Nov 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/42
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method for treating a surface of a semiconductor substrate is disclosed. The semiconductor substrate has a first pattern covered by a resist and a second pattern not covered by the resist. The method includes supplying a resist-insoluble first chemical solution onto a semiconductor substrate to subject the second pattern to a chemical solution process. The method includes supplying a mixed liquid of a water repellency agent and a resist-soluble second chemical solution onto the semiconductor substrate after the supply of the first chemical solution, to form a water-repellent protective film on a surface of at least the second pattern and to release the resist. In addition, the method can rinse the semiconductor substrate using water after the formation of the water-repellent protective film, and dry the rinsed semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.