Silicon light emitting diode, silicon optical transistor, silicon laser and its manufacturing method
US8436333B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2007 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Aug 30, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3224
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A light-emitting device according to the present invention includes a first electrode unit for injecting an electron, a second electrode unit for injecting a hole, and light-emitting units and electrically connected to the first electrode unit and the second electrode unit respectively, wherein the light-emitting units and are formed of single-crystal silicon, the light-emitting units and having a first surface (topside surface) and a second surface (underside surface) opposed to the first surface, plane orientation of the first and second surfaces being set to a (100) plane, thicknesses of the light-emitting units and in a direction orthogonal to the first and second surfaces being made extremely thin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.