Fabrication of phosphor free red and white nitride-based LEDs
US8436334B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2007 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | Jun 1, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A multiple quantum well (MQW) structure for a light emitting diode and a method for fabricating a MQW structure for a light emitting diode are provided. The MQW structure comprises a plurality of quantum well structures, each quantum well structure comprising: a barrier layer; and a well layer having quantum dot nanostructures embedded therein formed on the barrier layer, the barrier and the well layer comprising a first metal-nitride based material; wherein at least one of the quantum well structures further comprises a capping layer formed on the well layer, the capping layer comprising a second metal-nitride based material having a different metal element compared to the first metal-nitride based material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.