Patent · US Active

Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same

US8436393B2 · kind B2 · utility

3Cited by

90References

17Claims

0Family size

Assignee

OSRAM GmbH · DE

Inventors

Berthold Hahn · Hemau, DE
Ulrich Jacob · Regensburg, DE
Hans-Jürgen Lugauer · Sinzing, DE
Manfred Mundbrod-Vangerow · Oxenbronn, DE

Key dates

Filing date	Apr 4, 2011
Grant date	May 7, 2013
Priority date	—
Expiry date	Apr 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/833
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.