Solid state back-illuminated photon sensor
US8436423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2011 |
| Grant date | May 7, 2013 |
| Priority date | — |
| Expiry date | May 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/331
Abstract
A backside-illuminated image sensor is disclosed having improved quantum efficiency (QE) in the near infrared wavelengths (NIR: 750-1100 nm) with minimal optical interference fringes produced by multiple reflected rays within the photosensitive Si region of the sensor, which may be a charge-coupled device, a complementary metal oxide sensor or an electron-multiplication sensor. The invention comprises a fringe suppression layer applied to the backside surface of the photosensitive Si region of a detector (Si substrate) whereby the fringe suppression layer functions in concert with the Si substrate to reduce the occurrence of interference fringes in the NIR while maintaining a high QE over a broad range of wavelengths (300-1100 nm). The combination of a fringe suppression layer applied to a Si substrate provides a new class of back illuminated solid state detectors for imaging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.