Method of polishing a substrate
US8440094B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Oct 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon dioxide is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon dioxide removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon dioxide removal rate selectivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.