Methods and materials for CAIGAS aluminum-containing photovoltaics
US8440114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2010 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Aug 26, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
This invention relates to methods for materials using compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. This invention further relates to thin film CA(I,G,A)S, CAIGAS, A(I,G,A)S, AIGAS, C(I,G,A)S, and CIGAS materials made by a process of providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate at a temperature of from about 20° C. to about 650° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.