Method for making light emitting diode
US8440485B2 · kind B2 · utility
8Cited by
0References
16Claims
0Family size
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Key dates
| Filing date | Nov 3, 2011 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Nov 3, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making a LED includes following steps. A substrate is provided, and the substrate includes an epitaxial growth surface. A carbon nanotube layer is placed on the epitaxial growth surface. A first semiconductor layer, an active layer, and a second semiconductor layer are grown in that order on the substrate. A reflector and a first electrode are deposited on the second semiconductor layer in that order. The substrate is removed. A second electrode is deposited on the first semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.