Patent · US Active

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate and in a semiconductor device

US8440553B2 · kind B2 · utility

4Cited by

12References

34Claims

0Family size

Assignee

Infineon Technologies Austria AG · AT

Inventors

Gerhard Schmidt · Graz, AT
Josef Bauer · Munich, DE

Key dates

Filing date	Apr 25, 2008
Grant date	May 14, 2013
Priority date	—
Expiry date	Jan 3, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D8/60
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Method of producing a vertically inhomogeneous platinum or gold distribution in a semiconductor substrate with a first and a second surface opposite the first surface, with diffusing (100) platinum or gold into the semiconductor substrate from one of the first and second surfaces of the semiconductor substrate, removing (102) platinum- or gold-comprising residues remaining on the one of the first and second surfaces after diffusing the platinum or gold, forming (104) a phosphorus- or boron-doped surface barrier layer on the first or second surface, and heating (105) the semiconductor substrate for local gettering of the platinum or gold by the phosphorus- or boron-doped surface barrier layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.