Semiconductor apparatus manufacturing method and semiconductor apparatus
US8440565B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 18, 2009 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Jul 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method of manufacturing the semiconductor apparatus, including: forming through-hole which penetrates a semiconductor substrate at a point that corresponds to a location of an electrode pad; forming an insulating film on a rear surface of the semiconductor substrate, including the interior of the through-hole; forming an adhesion securing layer from a metal or an inorganic insulator on a surface of the insulating film at least in an opening portion of the through-hole; forming a resist layer to serve as a mask in bottom etching on the adhesion securing layer; performing bottom etching to expose the electrode pad; removing the resist layer to obtain the insulating film free of surface irregularities that would otherwise have been created by bottom etching; forming a barrier layer, a seed layer, and a conductive layer by a low-temperature process; and performing patterning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.