Radiation detector with microstructured silicon
US8440972B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2009 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Mar 14, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J5/40
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A radiation detector includes material for absorbing incident radiation, and for providing a response to heating caused by the absorption of photons from the incident radiation. The radiation detector may include multiple pixels, each with one or more layers of absorbing material. The absorbing material may include black (microstructured) silicon, which has the advantage of being a good absorber of radiation in the short wave infrared (SWIR) wavelengths (as well as ultraviolet (UV) wavelengths and visible light wavelengths). The radiation detector may include multiple pixels, each separately responding to radiation incident on that pixel, and each including black silicon (as well as possibly other absorptive materials). The pixels of the detector may each have cantilevered attachment to a frame of the detector, with differences in coefficient of thermal expansion of materials of the pixels causing deflection of parts of the pixels due to heating from absorption of radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.