Nanowire photodetector and image sensor with internal gain

US8440997B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Deli Wang · San Diego, US
• Cesare Soci · San Diego, US
• Yu-Hwa Lo · San Diego, US
• Arthur Zhang · Beijing, CN
• David Aplin · Village of La Jolla, US
• Lingquan Wang · Irvine, US
• Shadi A. Dayeh · San Diego, US
• Xin Yu Bao · Mountain View, US

Key dates

• Filing date: Feb 26, 2008
• Grant date: May 14, 2013
• Expiry date: Apr 24, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/146
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A 1D nanowire photodetector device includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to inhibits photo-carrier recombination, thus enhancing the photocurrent response. Circuits of 1D nanowire include groups of photodetectors addressed by their individual 1D nanowire electrode contacts. Placement of 1D nanostructures is accomplished with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of 1D nanostructures. The 1D nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the 1D nanostructures in predetermined, registered positions on the substrate.