Solution composition for manufacturing metal oxide semiconductor
US8441008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2010 |
| Grant date | May 14, 2013 |
| Priority date | — |
| Expiry date | Apr 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0241
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a solution composition for manufacturing a metal oxide semiconductor including aluminum salts, metal acetylacetonate and a solvent. In addition, provided is a method for manufacturing a metal oxide semiconductor, including: manufacturing of a metal oxide semiconductor by performing heat treatment after coating a solution composition for manufacturing the metal oxide semiconductor above a substrate. In addition, provided is a thin film transistor, including: a gate substrate; a metal oxide semiconductor manufactured to be overlapped with the gate substrate; a source electrode electrically connected to the metal oxide semiconductor; and a drain electrode that is electrically connected to the metal oxide semiconductor and faces the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.