Patent · US Active

Scalable interpoly dielectric stacks with improved immunity to program saturation

US8441064B2 · kind B2 · utility

0Cited by

1References

16Claims

0Family size

Assignee

IMEC · BE

Inventors

Bogdan Govoreanu · Leuven, BE
Stefan De Gendt · Wijnegem, BE
Sven Van Elshocht · Heverlee, BE
Tom Schram · Rixensart, BE

Key dates

Filing date	Aug 11, 2011
Grant date	May 14, 2013
Priority date	—
Expiry date	Dec 16, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/685

Abstract

A method for manufacturing a non-volatile memory device is described. The method comprises growing a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored. A non-volatile memory device is also described. In the non-volatile memory device, the interpoly/blocking dielectric comprises a layer in a siliconoxide consuming material, e.g. DyScO, on top of the upper layer of the layer where charge is stored, the siliconoxide consuming material having consumed at least part of the upper layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.